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| PR IM EL Y AR IN CXT853 Central TM Semiconductor Corp. SURFACE MOUNT HIGH CURRENT SILICON NPN TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT853 type is a high current, high voltage silicon NPN transistor. Packaged in the SOT-89 surface mount case, the CXT853 is ideal for industrial and consumer applications requiring high energy efficiency in a small package. MARKING CODE: FULL PART NUMBER SOT-89 CASE FEATURES: * Low Saturation Voltage: VCE(SAT) = 0.340V Max @ IC = 5.0A MAXIMUM RATINGS: (TA=25C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance PNP complement: CXT953 APPLICATIONS: * Power Management * DC/DC Converters * Motor Driving * Switching SYMBOL VCBO SYMBOL ICBO ICBO ICER IEBO BVCBO BVCER BVCEO BVEBO ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted) TEST CONDITIONS MIN VCB=150V VCB=150V, TA=100C VCE=150V, RBE 1k VEB=6.0V IC=100A IC=10mA, RBE 1k IC=10mA IE=100A IC=100mA, IB=5mA IC=2.0A, IB=100mA IC=5.0A, IC=5.0A, IB=500mA IB=500mA 200 200 100 6.0 P E R I L IN M VCEO VEBO IC PD TJ,Tstg JA Y R A 200 100 6.0 6.0 1.2 -65 to +150 104 TYP MAX 10 1.0 10 10 220 210 110 8.0 22 135 50 170 340 1.25 UNITS V V V A W C C/W UNITS nA A nA nA V V V V mV mV mV V VCE(SAT) VCE(SAT) VCE(SAT) VBE(SAT) R0 (1-February 2006) Central TM Semiconductor Corp. P L RE IM INA RY CXT853 SURFACE MOUNT HIGH CURRENT SILICON NPN TRANSISTOR SYMBOL hFE hFE hFE hFE fT Cob ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted) TEST CONDITIONS MIN VCE=2.0V, IC=10mA VCE=2.0V, IC=2.0A VCE=2.0V, IC=4.0A VCE=2.0V, IC=10A VCE=10V, IC=100mA, f=50MHz VCB=10V, IE=0, f=1.0MHz 100 100 50 20 TYP MAX UNITS 200 100 30 190 38 300 MHz pF SOT-89 CASE - MECHANICAL OUTLINE LEAD CODE: 1) EMITTER 2) COLLECTOR 3) BASE MARKING CODE: CXT853 R0 (1-February 2006) |
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